High performance InGaP/GaAs HBTs for mobile communications

Electronics Letters

Volumn 36, Issue 12, 2000, Pages 1073-1074

  Achouche, M ^a   Spitzbart, T ^a   Kurpas, P ^a   Brunner, F ^a   Wurfl J ^a   Trankle G ^a  

^a LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; ELECTRIC POTENTIAL; LITHOGRAPHY; MICROPROCESSOR CHIPS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON WAFERS;

STEPPER LITHOGRAPHY;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0033699395     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20000782     Document Type: Article

References (4)

1. IWAI, T., OHARA, S., MIYASHITA, T., and JOSHIN, K.: '63.2% high efficiency and high linearity two-stage InGaP/GaAs HBT power amplifier for personal digital cellular phone system', IEEE Trans., 1998, pp. 435-438 (MTT-S Digest)
2. ACHOUCHE, M., HÄHLE, S., HEYMANN, P., JOHN, W., KRAUS, S., MAI, M., RENTNER, D., RICHTER, E., SPITZBART, T., WOLTER, P., WITTRICH, H., WÜRFL, J., and TRÄNKLE, G.: 'AlGaAs/GaAs heterojunction bipolar transistors for L-band applications'. Extend. Abs. 1998 Workshop on Compound Semiconductors Devices and Integrated Circuits, 1998, pp. 47-48
3. BAHL, S.R., CAMNITZ, L.H., HOUNG, D., and MIERZWINSKI, M.: 'Reliability investigation of InGaP/GaAs heterojunction bipolar transistors', IEEE Electron Device Lett., 1996, 17, pp. 446-448
4. UEDA, O., KAWANO, A., TAKAHASHI, T., TOMIOKA, T., FUJII, T., and SASA, S.: 'Current status of reliability of InGaP/GaAs HBTs', Solid-State Electron., 1997, 41, pp. 1605-1609