Scaling of band-gap reduction in heavily nitrogen doped GaAs

Physical Review B - Condensed Matter and Materials Physics

Volumn 63, Issue 16, 2001, Pages

  Zhang, Yong ^a   Mascarenhas, A ^a   Xin, H P ^b,c   Tu, C W ^b  

^a NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

^c Emcore/Mode   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC DERIVATIVE; GALLIUM; NITROGEN;

ARTICLE; CHEMICAL BINDING; REDUCTION; SEMICONDUCTOR;

EID: 0034885707     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.63.161303     Document Type: Article

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