Dilute nitride based III-V alloys for laser and solar cell applications

Current Opinion in Solid State and Materials Science

Volumn 5, Issue 4, 2001, Pages 253-259

  Mascarenhas, A ^a   Zhang, Yong ^a  

^a NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALLOY;

EID: 0034842337     PISSN: 13590286     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1359-0286(01)00013-4     Document Type: Article

References (48)

1. The ideal light source for datanets
2. Solar cells
3. Red shift of photoluminescence and absorption in dilute GaAsN alloy layers
4. GaInNAs: A novel material for long-wavelength-range laser diodes with excellent high temperature performance
5. Minority carrier diffusion, defects, and localization in InGaAsN, with 2% nitrogen
6. x alloys
7. x ordered alloys
8. Giant and composition-dependent optical bowling coefficient in GaAsN alloys
9. x (x<0.20)
10. Nitrogen pair luminescence in GaAs
11. Localization and percolation in semiconductor alloys: GaAsN vs. GaAsP
12. x with x<0.03
13. Band anticrossing in GaInNAs alloys
14. y alloys and effects of pressure
15. x alloys
16. x Schottky barrier reduction studied by ballistic electron emission spectroscopy
17. Optical spectroscopic studies of N-related bands in Ga(N,As)
18. 1 determined by spectroscopic ellipsometry
19. Ellipsometric study of the optical properties of InGaAsN layers
20. Effect of nitrogen on the electronic band structure of group III-N-V alloys
21. 1-x. alloy
22. Discrete and continuous spectrum of nitrogen induced bound states in heavily doped GaAs:N
23. Optical transitions in isoelectronically doped semiconductor GaP:N: An evolution from isolated centers, pairs, clusters to an impurity band
24. Formation of an impurity band and its quantum confinement in heavily doped GaAs:N
25. 1-x and related alloys
26. 1-x
27. Optical properties of InGaAsN: A new 1 eV bandgap material system
28. x alloys
29. Direct determination of electron effective mass in GaNAs/GaAs quantum wells
30. Electronic states and band alignment in GaInNAs/GaAs quantum-well structures with low nitrogen content
31. x alloy (x<0.3%)
32. Quantum mechanical theory of linewidths of localized radiative transitions in semiconductor alloys
33. Theory of exciton linewidth in II-VI semiconductor mixed crystals
34. Theory of magnetic-field-dependent alloy broadening of exciton-photoluminescence linewidths in semiconductor alloys
35. Optical detection of cyclotron resonance for characterization of recombination processes in semiconductors
36. Plasmons, photoluminescence, and band-gap narrowing in very heavily doped n-GaAs
37. Fluorescence and photoconduction in tellurium-doped cadmium sulphide
38. Scaling of band gap reduction in heavily nitrogen doped GaAs
39. x alloys
40. Isoelectronic traps due to nitrogen in gallium Phosphide
41. Large-scale local-density-approximation band gap-corrected GaAsN calculations
42. Elementary description of the optical properties of GaAsN alloys with small nitrogen content
43. x studied with resonant raman scattering
44. Indium-doped GaAs: A very dilute alloy system
45. The nitrogen isoelectronic trap in GaAs
46. Band gaps of GaPN and GaAsN alloys