Electronic structure of heavily and randomly nitrogen doped GaAs near the fundamental band gap

Physica Status Solidi (B) Basic Research

Volumn 228, Issue 1, 2001, Pages 287-291

  Zhang, Yong ^a   Francoeur, S ^a   Mascarenhas, A ^a   Xin, H P ^b   Tu, C W ^b  

^a NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035541094     PISSN: 03701972     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-3951(200111)228:1<287::AID-PSSB287>3.0.CO;2-3     Document Type: Article

References (23)

1. D. J. WOLFORD, J. A. BRADLEY, K. FRY, J. THOMPSON, and H. E. KING, in: Inst. Phys. Conf. Ser. No. 65, Ed. G. E. STILLMAN, The Institute of Physics, Bristol 1983 (p. 477). D. J. WOLFORD, J. A. BRADLEY, K. FRY, and J. THOMPSON, in: Proc. 17th Internat. Conf. Physics of Semiconductors, Eds. J. D. CHADI and W. A. HARRISON, Springer-Verlag, New York 1984 (p. 627).
2. D. J. WOLFORD, J. A. BRADLEY, K. FRY, J. THOMPSON, and H. E. KING, in: Inst. Phys. Conf. Ser. No. 65, Ed. G. E. STILLMAN, The Institute of Physics, Bristol 1983 (p. 477). D. J. WOLFORD, J. A. BRADLEY, K. FRY, and J. THOMPSON, in: Proc. 17th Internat. Conf. Physics of Semiconductors, Eds. J. D. CHADI and W. A. HARRISON, Springer-Verlag, New York 1984 (p. 627).
3. X.-S. ZHAO, G.-H. LI, H.-X. HAN, Z.-P. WANG, R.-M. TANG, and R.-Z. CHE, Acta Phys. Sin. 33, 588 (1984) [Chin. Phys. 5, 337 (1985)].
4. X.-S. ZHAO, G.-H. LI, H.-X. HAN, Z.-P. WANG, R.-M. TANG, and R.-Z. CHE, Acta Phys. Sin. 33, 588 (1984) [Chin. Phys. 5, 337 (1985)].
5. M. LEROUX, G. NEU, and C. VÈRIÉ, Solid State Commun. 58, 289 (1986).
6. X. LIU, M.-E. PISTOL, L. SAMUELSON, S. SCHWETLICK, and W. SEIFERT, Appl. Phys. Lett. 56, 1451 (1990). X. LIU, M.-E. PISTOL, and L. SAMUELSON, Phys. Rev. B 42, 7504 (1990).
7. X. LIU, M.-E. PISTOL, L. SAMUELSON, S. SCHWETLICK, and W. SEIFERT, Appl. Phys. Lett. 56, 1451 (1990). X. LIU, M.-E. PISTOL, and L. SAMUELSON, Phys. Rev. B 42, 7504 (1990).
8. T. MAKIMOTO, H. SAITO, T. NISHIDA, and N. KOBAYASHI, Appl. Phys. Lett. 70, 2984 (1997). T. MAKIMOTO, H. SAITO, and N. KOBAYASHI, Jpn. J. Appl. Phys. 36, 1694 (1997).
9. T. MAKIMOTO, H. SAITO, T. NISHIDA, and N. KOBAYASHI, Appl. Phys. Lett. 70, 2984 (1997). T. MAKIMOTO, H. SAITO, and N. KOBAYASHI, Jpn. J. Appl. Phys. 36, 1694 (1997).
10. H. GÜNING, L. CHEN, TH. HARTMANN, P. J. KLAR, W. HEIMBRODT, F. HÖHNSDORF, J. KOCH, and W. STOLZ, phys. stat. sol. (b) 215, 39 (1999).
11. Y. ZHANG, A. MASCARENHAS, J. F. GEISZ, H. P. XIN, and C. W. TU, Phys. Rev. B 63, 85205 (2001).
12. S. FRANCOEUR, G. SIVARAMAN, Y. QIN, S. NIKISHIN, and H. TEMKIN, Appl. Phys. Lett. 72, 1857 (1998).
13. M. WEYERS, M. SATO, and H. ANDO, Jpn. J Appl. Phys. 31, L853 (1992).
14. Y. ZHANG, A. MASCARENHAS, H. P. XIN, and C. W. TU, Phys. Rev. B 63, R161303 (2001).
15. Y. ZHANG, A. MASCARENHAS, H. P. XIN, and C. W. TU, Phys. Rev. B 61, 7479 (2000).
16. W. SHAN, W. WALUKIEWICZ, J. W. AGER III, E. E. HALLER, J. F. GEISZ, D. J. FRIEDMAN, J. M. OLSON, and S. R. KURTZ, Phys. Rev. Lett. 82, 1221 (1999).
17. E. D. JONES, N. A. MODLINE, A. A. ALLERMAN, S. R. KURTZ, A. F. WRIGHT, S. T. TOZER, and X. WEI, Phys. Rev. B 60, 4430 (1999).
18. T. MATTILA, S.-H. WEI, and A. ZUNGER, Phys. Rev. B 60, R11245 (1999).
19. Y. ZHANG, B. FLUEGEL, A. MASCARENHAS, H. P. XIN, and C. W. TU, Phys. Rev. B 62, 4493 (2000).
20. J. H. COLLET, J. A. KASH, D. J. WOLFORD, and J. THOMPSON, J. Phys. C 16, 1283 (1983).
21. B. I. SHKLOVSKII and A. L. EFROS, Electronic Properties of Doped Semiconductors, Springer-Verlag, Berlin 1984.
22. J. J. HOPFIELD, D. G. THOMAS, and R. T. LYNCH, Phys. Rev. Lett. 17, 312 (1966).
23. P. R. C. KENT and A. ZUNGER, Phys. Rev. Lett. 86, 2613 (2001).