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Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 2002, Pages 365-368

High reliability of 0.07 μm Pseudomorphic InGaAs/InAlAs/InP HEMT MMICs on 3-inch InP substrates

(12) Chou, Yeong C a Leung, D a Lai, R a Grundbacher, R a Barsky, M a Tsai, R a Eng, D a Wojtowicz, M a Nishimoto, M a Liu, P H a Oki, A a Streit, D a

a NORTHROP GRUMMAN CORPORATION (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; AMPLIFIERS (ELECTRONIC); HIGH ELECTRON MOBILITY TRANSISTORS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; STRESSES;

PSEUDOMORPHIC DEVICES;

MONOLITHIC MICROWAVE INTEGRATED CIRCUITS;

EID: 0036053493 PISSN: 10928669 EISSN: None Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper

Times cited : (10)

References (12)

1
- 0003053090
- 0.1 μm InGaAs/InAlAs/InP HEMT production process for high performance and high volume MMW applications
- (1999) Proceedings of International Conference on Gallium-Arsenide Manufacturing Technology , pp. 249-252
- Lai, R.¹ Barsky, M.² Gmundbacher, R.³ Tran, L.⁴ Block, T.⁵ Chin, T.P.⁶ Medvedev, V.⁷ Sabin, E.⁸ Rogers, H.⁹ Liu, P.H.¹⁰ Chen, Y.C.¹¹ Tsai, R.¹² Streit, D.¹³

2
- 0033359958
- 118 GHz MMIC radiometer for the (IMAS) integrated multi-spectral atmospheric sounder
- (1999) Digest of IEEE MTT-S , pp. 479-483
- Sholley, M.¹ Barber, G.² Lai, R.³ Barsky, M.⁴ Tsai, R.⁵ Streit, D.C.⁶ Osgood, B.⁷

3
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- High performance d-band (118 GHz) monolithic low noise amplifier
- (1999) Technical Digest of IEEE Radio Frequency Integrated Circuits (RFIC) Symposium , pp. 99-102
- Nishimoto, M.¹

4
- 0030678240
- D-band MMIC LNAs with 12 dB gain at 155 GHz fabricated on a high yield InP HEMT production process
- (1997) Proceedings of International Conference InP and Related Materials , pp. 241-244
- Lai, R.¹

5
- 0033710472
- A 183 GHz low noise amplifier module for the conical-scanning microwave imager sounder (CMIS) program
- (2000) Digest of IEEE International MTT Symposium , pp. 987-990
- Raja, R.¹

6
- 17644447790
- InP HEMT amplifier for G-band (140-220 GHz) applications
- (2000) Technical Digest of IEEE International Electron Device Meeting , pp. 175-177
- Lai, R.¹

7
- 0032637356
- 190 GHz InP HEMT MMIC LNA with dry etched backside vias
- (1999) Proceedings of International Conference InP and Related Materials , pp. 423-425
- Barsky, M.¹ Lai, R.²

8
- 0035683168
- A 183 GHz low noise amplifier module with 7.1 dB noise figure for the conical- scanning microwave imager sounder (CMIS) program
- (2001) Digest of IEEE International MTT Symposium
- Raja, R.¹

9
- 0034840736
- High reliability of 0.1 μm InGaAs/InAlAs/InP HEMT MMICs on 3-inch InP substrates
- (2001) Proceedings of International Conference InP and Related Materials , pp. 618-621
- Chou, Y.C.¹

10
- 6444244380
- High reliability of 0.1 μm InGaAs/InAlAs/InP high electron mobility transistors microwave monolithic integrated circuit on 3-inch inp substrates
- (2002) Jpn. J. Appl. Physics , vol.41 , pp. 1-5
- Chou, Y.C.¹

11
- 0035173380
- High reliability of 0.1 μm InGaAs/InAlAs/InP MMICs on 3-inch InP production process
- (2001) Technical Digest of GaAs IC Symposium , pp. 174-177
- Chou, Y.C.¹

12
- 0036085284
- Evolutions of DC and RF degradation induced by high-temperature accelerated lifetest of pseudomorphic GaAs and InGaAs/InAlAs/InP HEMT MMICs
- (2002) Proceedings of International Reliability Physics Symposium
- Chou, Y.C.¹

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.