Growth temperature dependence of annealing effect for GaInNAs/GaAs quantum wells grown by metalorganic chemical vapor deposition

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 2002, Pages 237-240

  Kawaguchi, M ^a   Miyamoto, T ^a   Minobe, S ^a   Koyama, F ^a   Iga, K ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; LASER APPLICATIONS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL PROPERTIES; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH; THERMAL EFFECTS;

GROWTH TEMPERATURE DEPENDENCE;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0036053123     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (14)