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Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 20, Issue 3, 2002, Pages 1251-1258

Kinetics of the heteroepitaxial growth of Ge on Si(001)

(5) Yam, V a Le Thanh, Vinh a Boucaud, P a Debarre D a Bouchier, D a

a UNIVERSITÉ PARIS SACLAY (France)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; GROWTH KINETICS; MONOLAYERS; MORPHOLOGY; NUCLEATION; PHOTOLUMINESCENCE; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SPECTROSCOPIC ANALYSIS; ULTRAHIGH VACUUM; WETTING;

HETEROEPITAXIAL GROWTH;

EPITAXIAL GROWTH;

EID: 0035998573 PISSN: 10711023 EISSN: None Source Type: Journal
DOI: 10.1116/1.1473177 Document Type: Conference Paper

Times cited : (14)

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