Reduction of etching plasma damage on low dielectric constant fluorinated amorphous carbon films by multiple H2 plasma treatment

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 20, Issue 4, 2002, Pages 1476-1481

  Shieh, Jia Min ^a   Tsai, Kou Chiang ^a   Dai, Bau Tong ^a   Wu, Yew Chung ^b   Wu, Yu Hen ^b  

^a NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; FLUORINE COMPOUNDS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HYDROGEN; PERMITTIVITY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PLASMA ETCHING; SECONDARY ION MASS SPECTROMETRY; STRUCTURE (COMPOSITION); TEMPERATURE PROGRAMMED DESORPTION; THERMAL STRESS; THERMODYNAMIC STABILITY;

DANGLING BOND; FLUORINATED AMORPHOUS CARBON FILM; HYDROGEN PLASMA TREATMENT; LOW DIELECTRIC CONSTANT; PLASMA DAMAGE;

AMORPHOUS FILMS;

EID: 0035982571     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1494067     Document Type: Conference Paper

References (15)