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Materials Science and Engineering: B

Volumn 82, Issue 1-3, 2001, Pages 77-81

Defects in undoped and Mg-doped GaN and AlxGa1-xN

(7) Meyer, B K a Hofmann, D M a Leiter, F H a Meister, D a Topf, M a Alves, H a Romanov, N b

a JUSTUS LIEBIG UNIVERSITY (Germany)

b IOFFE INSTITUTE (Russian Federation)

Author keywords

AlGaN; Deep defects; Magnetic resonance; Mg acceptor

Indexed keywords

CHEMICAL MODIFICATION; MAGNESIUM PRINTING PLATES; MAGNETIC RESONANCE; MICROSCOPIC EXAMINATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DOPING; STRAIN;

DEEP DEFECTS; VACANCY-TYPE COMPLEXES;

SEMICONDUCTING FILMS;

EID: 0035933212 PISSN: 09215107 EISSN: None Source Type: Journal
DOI: 10.1016/S0921-5107(00)00789-3 Document Type: Article

Times cited : (1)

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