Piezoresistive effect in metal-semiconductor-metal structures on p-type GaN

Applied Physics Letters

Volumn 76, Issue 26, 2000, Pages 3956-3958

  Gaska, R ^a   Shur, M S ^b   Bykhovski, A D ^b   Yang, J W ^c   Khan, M A ^c   Kaminski, V V ^d   Soloviov, S M ^d  

^a SENSOR ELECTRONIC TECHNOLOGY INC   (United States)

^b RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^c UNIVERSITY OF SOUTH CAROLINA   (United States)

^d IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0010356958     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.126833     Document Type: Article

References (5)

1. A. D. Bykhovski, V. V. Kaminski, M. S. Shur, Q. C. Chen, and M. A. Khan, Appl. Phys. Lett. 68, 818 (1996).
2. R. Gaska, J. Yang, A. D. Bykhovski, M. S. Shur, V. V. Kaminski, and S. M. Soloviev, Appl. Phys. Lett. 72, 64 (1998).
3. R. Gaska, J. Yang, A. D. Bykhovski, M. S. Shur, V. V. Kaminski, and S. M. Soloviev, Appl. Phys. Lett. 71, 3817 (1997).
4. R. Gaska, A. D. Bykhovski, M. S. Shur, V. V. Kaminski, and S. M. Soloviov, J. Appl. Phys. 85, 6932 (1999).
5. J. S. Shor, L. Bemis, and A. D. Kurtz, IEEE Trans. Electron Devices 41, 661 (1994).