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Journal of Applied Physics

Volumn 90, Issue 12, 2001, Pages 6130-6134

Residual donors and compensation in metalorganic chemical vapor deposition as-grown n-GaN

(6) Xu, Xiaoliang a Liu, Hongtu a Shi, Chaoshu a Zhao, Youwen b Fung, S c Beling, C D c

a UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA (China)

b INSTITUTE OF SEMICONDUCTORS (China)

c UNIVERSITY OF HONG KONG (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035894236 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.1413706 Document Type: Article

Times cited : (21)

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