Si in GaN - On the nature of the background donor

Physica Status Solidi (B) Basic Research

Volumn 198, Issue 1, 1996, Pages 243-249

  Wetzel, C ^a   Chen, A L ^a,b   Suski, T ^a   Ager III, J W ^a   Walukiewicz, W ^a  

^a LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^b LAM RESEARCH CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0041117659     PISSN: 03701972     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssb.2221980132     Document Type: Article

References (18)

1. I. AKASAKI and H. AMANO, J. Crystal Growth 146, 455 (1995).
2. S. NAKAMURA, M. SENOH, S.-I. NAGAHAMA, N. IWASA, T. YAMADA, T. MATSUSHITA, H. KIYOKU, and Y. SUGIMOTO, Japan. J. appl. Phys. 35, L74 (1996).
3. C. WETZEL, D. VOLM, B. K. MEYER, K. PRESSEL, S. NILSSON, E. N. MOKHOV, and P. G. BARANOV, Appl. Phys. Letters 65, 1033 (1994).
4. R. J. MOLNAR, T. LEI, and T. D. MOUSTAKAS, Appl. Phys. Letters 62, 72 (1993).
5. H. TEISSEYRE, P. PERLIN, T. SUSKI, I. GRZEGORY, A. PIETRASZKO, S. POROWSKI, and T. D. MOUSTAKAS, J. appl. Phys. 76, 2429 (1994).
6. P. PERLIN, T. SUSKI, H. TEISSEYRE, M. LESZCZYNSKI, I. GRZEGORY, J. JUN, S. POROWSKI, P. BOGUSLAWSKI, J. BERNHOLC, J. C. CHERVIN, A. POLIAN, and T. D. MOUSTAKAS, Phys. Rev. Letters 75, 296 (1995).
7. C. WETZEL, W. WALUKIEWICZ, E. E. HALLER, J. W. AGER III, I. GRZEGORY, S. POROWSKI, and T. SUSKI, Phys. Rev. B 53, 1322 (1996).
8. M. MIZUTA, M. TACHIKAWA, H. KUKIMOTO, and S. MINOMURA, Japan. J. appl. Phys. 24, L143 (1985).
9. C. A. ARGUELLO, D. L. ROUSSEAU, and S. P. S. PORTO, Phys. Rev. 181, 1351 (1969).
10. S. FISCHER, C. WETZEL, E. E. HALLER, and B. K. MEYER, Appl. Phys. Letters 67, 1298 (1995).
11. C. WETZEL, E. E. HALLER, H. AMANO, and I. AKASAKI, Appl. Phys. Letters 68, 2547 (1996).
12. A. MOORADIAN, Phys. Rev. Letters 20, 1102 (1968).
13. T. KOZAWA, T. KACHI, H. KANO, Y. TAGA, M. HASHIMOTO, N. KOIDE, and K. MANABE, J. appl. Phys. 75, 1098 (1994).
14. P. PERLIN, C. JAUBERTHIE-CARILLON, J. P. ITIE, A. SAN MIGUEL, I. GRZEGORY, and A. POLIAN, Phys. Rev. B 45, 83 (1992).
15. N. KANEDA, T. DETCHPROHM, K. HIRAMATSU, and N. SAWASAKI, Japan. J. appl. Phys. 35, L468 (1996).
16. B. K. MEYER, D. VOLM, A. GRABER, H. C. ALT, T. DETCHPROHM, K. AMANO, and I. AKASAKI, Solid State Commun. 95, 597 (1995).
17. J. BERNHOLC, P. BOPGUSLAWSKI, E. L. BRIGGS, B. CHEN, K. RAPCEWICZ, B. YAKOBSON, and Z. ZHANG, Presented at the 1996 Spring Meeting of the Materials Research Society, San Francisco, April 8-12, 1996.
18. J. NEUGEBAUER and C. G. VAN DE WALLE, 22nd Internat. Conf. Physics of Semiconductors, Vancouver 1994, World Scientific Publ. Co., Singapore 1995 (p. 2327).