Low hydrogen content, high quality hydrogenated amorphous silicon grown by hot-wire CVD

Materials Research Society Symposium - Proceedings

Volumn 557, Issue , 1999, Pages 97-102

  Nelson, Brent P ^a   Grand All, Richard S ^a   Mahan, Eugene Iwaniczko A H ^a   Wang, Q I ^a   Yueqin, X U ^a   Gao, W E I ^a  

^a NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTAL DEFECTS; FILM GROWTH; HYDROGEN; HYDROGENATION; SILANES; SUBSTRATES; THERMAL EFFECTS; TUNGSTEN;

HOT WIRE CHEMICAL VAPOR DEPOSITION; HYDROGENATED AMORPHOUS SILICON;

AMORPHOUS SILICON;

EID: 0033298554     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-557-97     Document Type: Article

References (5)

1. A.H. Mahan and M. Vanecek, Amer. Inst. ofPhy. Conf. Proc. 234,195 (1991).
2. B.P. Nelson, Q. Wang, E. Iwaniczko, A.H. Mahan, and R.S. Crandall, Mater. Res. Soc. Proc. 507, San Francisco, ÇA, 1998 pp 927-932.
3. nd WCPEC, Vienna, Austria, 1998.
4. R.S. Crandall, A.H. Mahan, B.P. Nelson, M. Vanecek, I. Baiberg, AJP Conf. Proc. 268, Photovoltaic Advanced Research & Development Project, Denver, CO 1992, pp. 81-87.
5. - 5. E.G. Molenbroek, A.H. Mahan, A. Gallagher, Jour, of Appl. Phys. 82 (4), 1909, 15 August 1997.