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Volumn 507, Issue , 1999, Pages 113-118
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Preparation of a-Si:H and a-SiGe:H i-layers for nip solar cells at high deposition rates using a very high frequency technique
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Author keywords
[No Author keywords available]
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Indexed keywords
AMORPHOUS SILICON;
PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;
SILICON SOLAR CELLS;
VERY HIGH FREQUENCY (VHF) METHOD;
SILICON ALLOYS;
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EID: 0032630869
PISSN: 02729172
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
Times cited : (7)
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References (8)
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