High pressure fabrication and processing of GaN:Mg

Materials Science and Engineering B: Solid-State Materials for Advanced Technology

Volumn 59, Issue 1-3, 1999, Pages 1-5

  Suski, T ^a   Jun, J ^a   Leszczynski, M ^a   Teisseyre, H ^a   Grzegory, I ^a   Porowski, S ^a   Dollinger, G ^b   Saarinen, K ^c   Laine, T ^c   Nissila J ^c   Burkhard, W ^d   Kriegseis, W ^d   Meyer, B K ^d  

^a INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

^b TECHNICAL UNIVERSITY OF MUNICH   (Germany)

^c AALTO UNIVERSITY   (Finland)

^d JUSTUS LIEBIG UNIVERSITY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BAND STRUCTURE; CRYSTALLOGRAPHY; DISLOCATIONS (CRYSTALS); HIGH PRESSURE EFFECTS; HIGH TEMPERATURE EFFECTS; ION IMPLANTATION; OPTOELECTRONIC DEVICES; PHOTOLUMINESCENCE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR GROWTH;

BLUE LUMINESCENCE INTENSITY; EPILAYERS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0033528902     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(98)00402-4     Document Type: Article

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