Extended x-ray absorption fine structure (EXAFS) of InN and InGaN

Physica Status Solidi (B) Basic Research

Volumn 216, Issue 1, 1999, Pages 151-156

  O'Donnell, K P ^a   Martin, R W ^a   White, M E ^a   Mosselmans, J F W ^b   Guo, Qixin ^c  

^a UNIVERSITY OF STRATHCLYDE   (United Kingdom)

^b DARESBURY LABORATORY   (United Kingdom)

^c SAGA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0033242864     PISSN: 03701972     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-3951(199911)216:1<151::AID-PSSB151>3.0.CO;2-7     Document Type: Article

References (11)

1. T. INUSHIMA, T. YAGUCHI, A. NAGASE, A. Iso and T. SHIRAISHI, Inst. Phys. Conf. Ser. 142, 971 (1995).
2. S. NAKAMURA and G. FASOL, The Blue Laser Diode, Springer-Verlag, Berlin 1997.
3. K.P. O'DONNELL, R. W. MARTIN, and P. G. MIDDLETON, Phys. Rev. Lett. 82, 237 (1999).
4. QIXIN GUO, NOBUHIRO SHINGAI, MITSUHIRO NISHIO, and HIROSHI OGAWA, J. Cryst. Growth 189/190, 466 (1998).
5. WIM VAN DER STRICHT, PhD Thesis, University of Ghent, 1999, unpublished.
6. R.W. MARTIN, P.G MIDDLETON, and K.P. O'DONNELL, Appl. Phys. Lett. 74, 263 (1999).
7. T.I. DOCRAT, J.F.W. MOSSELMANS, J.M. CHARNOCK, M.W. WHITELEY, D. COLLISON, F.R. LIVENS, C. JONES, and M.J. EDMISTON, Inorg. Chem. 38, 1879 (1999).
8. N. BINSTED, Daresbury Laboratories computer programme, 1998.
9. B. GIL and M. LEROUX, Properties of Indium Nitride, in: EMIS Datareview 23, 1999.
10. K.P. O'DONNELL, M.E. WHITE, S. PEREIRA, M.F. WU, A. VANTOMME, W. VAN DER STRICHT, and K. JACOBS, 3rd Internat. Conf. Nitride Semiconductors, Montpellier, July 5 to 9, 1999; phys. stat. sol. (b) 216, 171 (1999).
11. K.P. O'DONNELL, M.E. WHITE, S. PEREIRA, M.F. WU, A. VANTOMME, W. VAN DER STRICHT, and K. JACOBS, 3rd Internat. Conf. Nitride Semiconductors, Montpellier, July 5 to 9, 1999; phys. stat. sol. (b) 216, 171 (1999).