Spectroscopy and microscopy of localised and delocalised excitons in InGaN-based light emitting diodes and epilayers

Materials Science and Engineering B: Solid-State Materials for Advanced Technology

Volumn 59, Issue 1-3, 1999, Pages 288-291

  O'Donnell, K P ^a   Martin, R W ^a   Middleton, P G ^a   Bayliss, S C ^b   Fletcher, I ^b   Van Der Stricht, W ^c   Demeester, P ^c   Moerman, I ^c  

^a UNIVERSITY OF STRATHCLYDE   (United Kingdom)

^b DE MONTFORT UNIVERSITY   (United Kingdom)

^c GHENT UNIVERSITY   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODOLUMINESCENCE; ELECTROLUMINESCENCE; ENERGY DISPERSIVE SPECTROSCOPY; EXCITONS; IMAGING TECHNIQUES; LIGHT ABSORPTION; LIGHT EMITTING DIODES; PHOTOCURRENTS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM; SEMICONDUCTING INDIUM;

CHIP TYPE DIODES; EPILAYERS; PHOTOCURRENT SPECTRA; STOKE SHIFT; X RAY IMAGING;

NITRIDES;

EID: 0033528895     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(98)00343-2     Document Type: Article

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