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Volumn 80, Issue 4, 2000, Pages 635-645

SiC growth on Si(111) from a C60 precursor: A new experimental approach based on a hyperthermal supersonic beam

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[No Author keywords available]

Indexed keywords


EID: 0034175259     PISSN: 13642812     EISSN: None     Source Type: Journal    
DOI: 10.1080/13642810008209771     Document Type: Article
Times cited : (8)

References (26)
  • 14


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.