Growth of patterned SiC by ion modification and annealing of C 60 films on silicon

Applied Surface Science

Volumn 119, Issue 1-2, 1997, Pages 76-82

  Moro, L ^a   Paul, A ^a,e   Lorents, D C ^a   Malhotra, R ^a   Ruoff, R S ^a   Jiang, L ^a   Stupian, G W ^b   Wu, K J ^c   Subramoney, S ^d  

^a SRI INTERNATIONAL   (United States)

^b AEROSPACE CORPORATION   (United States)

^c CHARLES EVANS AND ASSOCIATES   (United States)

^d DUPONT COMPANY   (United States)

^e INDIAN INSTITUTE OF TECHNOLOGY GUWAHATI   (India)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ARGON; EVAPORATION; FILM GROWTH; FULLERENES; GALLIUM; ION BOMBARDMENT; SILICON; SURFACE PHENOMENA;

NONVOLATILE CARBON LAYER;

SILICON CARBIDE;

EID: 0031236296     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(96)01086-0     Document Type: Article

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