Gallium nitride epitaxy on silicon: importance of substrate preparation

Materials Research Society Symposium - Proceedings

Volumn 395, Issue , 1996, Pages 67-72

  Martin, G A ^a   Sverdlov, B N ^a   Botchkarev, A ^a   Morkoc, H ^a   Smith, D J ^a   Tsen, S C Y ^a   Thompson, W H ^a   Nayfeh, M H ^a  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; EPITAXIAL GROWTH; FILM GROWTH; MOLECULAR BEAM EPITAXY; NITRIDES; PHOTOLUMINESCENCE; SEMICONDUCTING SILICON; STACKING FAULTS; SUBSTRATES; SURFACES;

GALLIUM NITRIDE; NON ISOMORPHIC SUBSTRATE; PLASMA ENHANCED MOLECULAR BEAM EPITAXY; SUBSTRATE PREPARATION; X RAY ROCKING CURVE WIDTH;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0029770726     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (17)