ZnO buffer formed on Si and sapphire substrates for GaN MOVPE

Materials Research Society Symposium - Proceedings

Volumn 449, Issue , 1997, Pages 373-377

  Shirasawa, T ^a   Honda, T ^a   Koyama, F ^a   Iga, K ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON BEAMS; EPITAXIAL GROWTH; LASER ABLATION; METALLORGANIC VAPOR PHASE EPITAXY; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM COMPOUNDS; ZINC OXIDE;

GALLIUM NITRIDE; VERTICAL CAVITY SURFACE EMITTING LASERS;

SEMICONDUCTING FILMS;

EID: 0030679050     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)