Impact of substrate thickness on single-event effects in integrated circuits

IEEE Transactions on Nuclear Science

Volumn 48, Issue 6 I, 2001, Pages 1865-1871

  Dodd, P E ^a,b   Shaneyfelt, M R ^a,b   Fuller, E ^c   Pickel, J C ^a,d   Sexton, F W ^a,b   Winokur, P S ^a,b  

^a IEEE   (United States)

^b SANDIA NATIONAL LABORATORIES   (United States)

^c Novus Technologies   (United States)

^d PR and T Consulting   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SINGLE EVENT LATCHUP RESPONSE;

CURRENT VOLTAGE CHARACTERISTICS; ENERGY TRANSFER; EPITAXIAL GROWTH; SUBSTRATES;

INTEGRATED CIRCUITS;

EID: 0035720526     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.983144     Document Type: Conference Paper

References (25)

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