Monolithic 3.3V CCD/SOI-CMOS imager technology

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2000, Pages 697-700

  Suntharalingam, V ^a   Burke, B ^a   Cooper, M ^a   Yost, D ^a   Gouker, P ^a   Anthony, M ^a   Whittington, H ^a   Sage, J ^a   Burns, J ^a   Rabe, S ^a   Chen, C ^a   Knecht, J ^a   Cann, S ^a   Wyatt, P ^a   Keast, C ^a  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANALOG TO DIGITAL CONVERSION; CHARGE COUPLED DEVICES; CHARGE TRANSFER; CMOS INTEGRATED CIRCUITS; IMAGING SYSTEMS; OSCILLATORS (ELECTRONIC); SILICON ON INSULATOR TECHNOLOGY;

ON-CHIP CLOCKING TECHNIQUES;

IMAGE SENSORS;

EID: 17744420682     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. Integration of CMOS-electronics and particle detector diodes in high-resistivity silicon-on-insulator wafers
2. SOI wafer selection for CCD/SOI-CMOS technology
3. High responsivity CMOS imager pixel implemented in SOI technology