Planar integration of a resonant-tunneling diode with pHEMT using a novel proton implantation technique

IEEE Electron Device Letters

Volumn 19, Issue 12, 1998, Pages 478-480

  Chen, C L ^a   Mahoney, L J ^a   Calawa, S D ^a   Mathews, R H ^a   Molvar, K M ^a   Sage, J P ^a   Maki, P A ^a   Sollner, T C L G ^a  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTIVITY OF SOLIDS; HIGH ELECTRON MOBILITY TRANSISTORS; PROTONS;

PROTON IMPLANTATION; RESONANT TUNNELING DIODES (RTD);

SEMICONDUCTOR DIODES;

EID: 0032294972     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.735752     Document Type: Article

References (8)

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