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Volumn 81, Issue 8, 1998, Pages 18-24
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Physical limitations and design for sub-0.1-μm MOS devices: carrier velocity overshoot and performance fluctuation
a
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Author keywords
[No Author keywords available]
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Indexed keywords
CARRIER CONCENTRATION;
CARRIER MOBILITY;
CMOS INTEGRATED CIRCUITS;
ELECTRONS;
MOSFET DEVICES;
PERFORMANCE;
SEMICONDUCTOR DEVICE STRUCTURES;
THRESHOLD VOLTAGE;
CARRIER VELOCITY OVERSHOOT;
CHANNEL DOPANT DENSITY;
STATISTICAL PERFORMANCE FLUCTUATION;
MOS DEVICES;
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EID: 0032131722
PISSN: 8756663X
EISSN: None
Source Type: Journal
DOI: None Document Type: Article |
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Times cited : (2)
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References (11)
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