Cathodoluminescence and photoluminescence of amorphous silicon oxynitride

Microelectronics Reliability

Volumn 39, Issue 5, 1999, Pages 715-718

  Gritsenko, V A ^a   Shavalgin, Yu G ^b   Pundur, P A ^b   Wong, H ^c   Lau, W M ^d  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

^b UNIVERSITY OF LATVIA   (Latvia)

^c CITY UNIVERSITY OF HONG KONG   (Hong Kong)

^d CHINESE UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; BAND STRUCTURE; CATHODOLUMINESCENCE; CHEMICAL BONDS; ELECTRONS; INFRARED RADIATION; PHOTOLUMINESCENCE; ULTRAVIOLET RADIATION;

AMORPHOUS SILICON OXYNITRIDE;

SILICON NITRIDE;

EID: 0032671910     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(99)00036-0     Document Type: Article

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