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Materials Science in Semiconductor Processing

Volumn 4, Issue 6, 2001, Pages 521-527

Materials and technology issues for SiGe heterojunction bipolar transistors

(1) Ashburn, Peter a

a UNIVERSITY OF SOUTHAMPTON (United Kingdom)

Author keywords

Epitaxy; Heterojunction bipolar transistor; SiGe; SiGec; SOI; Transient enhanced diffusion; Wafer bonding

Indexed keywords

DIFFUSION; EPITAXIAL GROWTH; ION IMPLANTATION; LOW TEMPERATURE EFFECTS; SEMICONDUCTING BORON; SEMICONDUCTING SILICON COMPOUNDS; SILICON ON INSULATOR TECHNOLOGY; SILICON WAFERS;

TRANSIENT ENHANCED DIFFUSIONS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0035573549 PISSN: 13698001 EISSN: None Source Type: Journal
DOI: 10.1016/S1369-8001(02)00011-2 Document Type: Conference Paper

Times cited : (10)

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