A 60-GHz fT super self-aligned selectively grown SiGe-base (SSSB) bipolar transistor with trench isolation fabricated on SOI substrate and its application to 20-Gb/s optical transmitter IC's

IEEE Transactions on Electron Devices

Volumn 46, Issue 7, 1999, Pages 1332-1338

  Sato, Fumihiko ^a   Hashimoto, Takasuke ^a   Tezuka, Hiroshi ^a   Soda, Masaaki ^a   Suzaki, Tetsuyuki ^a   Tatsumi, Toru ^a   Tashiro, Tsutomu ^a  

^a NEC CORPORATION   (Japan)

Author keywords

Optical fiber communication; Selective epitaxial growth (SEG); Self aligned bipolar transistor; SiGe; Silicon on insulator (SOI)

Indexed keywords

EPITAXIAL GROWTH; INTEGRATED OPTOELECTRONICS; OPTICAL COMMUNICATION; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SILICON ON INSULATOR TECHNOLOGY;

SELECTIVE EPITAXIAL GROWTH (SEG);

BIPOLAR TRANSISTORS;

EID: 0032626818     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.772473     Document Type: Article

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