Transport properties of two-dimensional electron gases induced by spontaneous and piezoelectric polarisation in AlGaN/GaN heterostructures

Physica Status Solidi (B) Basic Research

Volumn 228, Issue 2, 2001, Pages 603-606

  Link, A ^a   Graf, T ^a   Dimitrov, R ^a   Ambacher, O ^a   Stutzmann, M ^a   Smorchkova, Y ^b   Mishra, U ^b   Speck, J ^b  

^a WALTER SCHOTTKY INSTITUT   (Germany)

^b University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035540237     PISSN: 03701972     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-3951(200111)228:2<603::AID-PSSB603>3.0.CO;2-Y     Document Type: Article

References (13)

1. L. F. EASTMAN et al., IEEE Trans. Electron Devices 48, 479 (2001).
2. Y. F. WU et al., IEEE Electron Device Lett. 18, 290 (1997).
3. O. AMBACHER, J. Phys. D 31, 2653 (1998).
4. O. AMBACHER et al., J. Appl. Phys. 85, 3222 (1999).
5. C. R. ELSASS et al., Appl. Phys. Lett. 74, 3528 (1999).
6. I. P. SMORCHKOVA et al., J. Appl. Phys. 86, 4520 (1999).
7. E. FRAYSSINET et al., Appl. Phys. Lett. 77, 2551 (2000).
8. M. J. MANFRA et al., Appl. Phys. Lett. 77, 2888 (2000).
9. R. DIMITROV et al., J. Appl. Phys. 87, 3375 (2000).
10. T. ANDO, A. B. FOWLER, and F. STERN, Rev. Mod. Phys. 54, 437 (1982).
11. Y. J. WANG et al., J. Appl. Phys. 79, 8007 (1996).
12. W. KNAP et al., Appl. Phys. Lett. 70, 2123 (1997).
13. W. KNAP et al., Appl. Phys. Lett. 75, 3156 (1999).