Oxide damage by ion implantation in silicon

Applied Physics Letters

Volumn 74, Issue 17, 1999, Pages 2453-2455

  Losavio, A ^a   Crivelli, B ^a   Cazzaniga, F ^a   Martini, M ^b   Spinolo, G ^b   Vedda, A ^b  

^a STMICROELECTRONICS   (Italy)

^b UNIVERSITY OF MILAN   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BORON; DRY ETCHING; ION IMPLANTATION; PHOSPHORUS; RADIATION DAMAGE; SEMICONDUCTOR DOPING; SILICA; THERMOLUMINESCENCE;

THERMALLY STIMULATED LUMINESCENCE (TSL);

SILICON WAFERS;

EID: 0032621908     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.123878     Document Type: Article

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