Deposition kinetics of silicon dioxide from hexamethyldisilazane and oxygen by PECVD

Thin Solid Films

Volumn 347, Issue 1-2, 1999, Pages 99-105

  Kim, Min Tae ^a  

^a Korea Electric Power Research Institute (KEPRI)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BONDS; DEPOSITION; ELECTRONS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; MATHEMATICAL MODELS; MONOMERS; OXYGEN; PARAFFINS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; REACTION KINETICS; SILICA; SILICON WAFERS;

DISCHARGE POWER; HEXAMETHYLDISILAZANE; INCORPORATION RATE; MONOMER FLOW RATE; OXYGEN FLOW RATES; RADIO FREQUENCY REACTOR; SURFACE CHEMISTRY MODEL;

THIN FILMS;

EID: 0344339153     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(98)01729-5     Document Type: Article

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