Room temperature deposition of silicon dioxide films by ion-assisted plasma enhanced chemical vapor deposition

Journal of the Electrochemical Society

Volumn 143, Issue 4, 1996, Pages 1443-1451

  Lee, Jung H ^a   Kim, Dong S ^a   Lee, Young H ^a  

^a Drexel University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; ATOMIC FORCE MICROSCOPY; ELLIPSOMETRY; FOURIER TRANSFORM INFRARED SPECTROSCOPY; ION BOMBARDMENT; MASS SPECTROMETERS; OXYGEN; PLASMA APPLICATIONS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICA; SILICON WAFERS; THIN FILMS;

GAS PHASE KINETICS; IMPEDANCE ANALYSIS; ION ASSISTED PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; ION ENERGY FLUX; ON LINE MASS SPECTROMETER; OPTICAL EMISSION SPECTROSCOPY; ROOM TEMPERATURE DEPOSITION; SILICON DIOXIDE FILMS; SURFACE TOPOLOGY; TETRAETHOXYSILANE;

CHEMICAL VAPOR DEPOSITION;

EID: 0030126976     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1836657     Document Type: Article

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