Microstructure and interfacial states of silicon dioxide film grown by low temperature remote plasma enhanced chemical vapor deposition

Journal of Applied Physics

Volumn 86, Issue 3, 1999, Pages 1346-1354

  Park, Young Bae ^a,b   Rhee, Shi Woo ^a  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

^b SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CHEMICAL BONDS; CHLORINE; COMPOSITION EFFECTS; CRYSTAL MICROSTRUCTURE; CURRENT VOLTAGE CHARACTERISTICS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PRESSURE EFFECTS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SILICA; THERMAL EFFECTS;

CAPACITANCE-VOLTAGE CHARACTERISTICS;

SEMICONDUCTING FILMS;

EID: 0032621309     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.370893     Document Type: Article

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