Inductively coupled plasma etching of GaN and its effect on electrical characteristics

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 19, Issue 6, 2001, Pages 2917-2920

  Rong, B ^a,b   Van Der Drift, E ^b   Reeves, R J ^a   Sloof, W G ^c   Cheung, R ^d  

^a UNIVERSITY OF CANTERBURY   (New Zealand)

^b DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

^c DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

^d UNIVERSITY OF EDINBURGH   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CURRENT VOLTAGE CHARACTERISTICS; DRY ETCHING; ELECTRIC PROPERTIES; GALLIUM NITRIDE; INDUCTIVELY COUPLED PLASMA; OHMIC CONTACTS; REACTIVE ION ETCHING; SURFACE TREATMENT; THERMAL EFFECTS; THRESHOLD VOLTAGE; X RAY PHOTOELECTRON SPECTROSCOPY;

DRY ETCH INDUCED DAMAGE EFFECTS; ION ENERGY THRESHOLD; SIDEWALL DEPLETION; SURFACE CONTAMINATION; TEMPERATURE DEPENDENCE;

PLASMA ETCHING;

EID: 0035519823     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1421543     Document Type: Article

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