Fabrication of nanostructures in GaN

Microelectronic Engineering

Volumn 53, Issue 1, 2000, Pages 419-422

  Rong, B ^a   Cheung, R ^a   Gao, W ^b   Kamp, M ^c  

^a UNIVERSITY OF CANTERBURY   (New Zealand)

^b UNIVERSITY OF AUCKLAND   (New Zealand)

^c UNIVERSITY OF ULM   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; ELECTRON BEAM LITHOGRAPHY; NANOSTRUCTURED MATERIALS; NITROGEN; PLASMA ETCHING; REACTIVE ION ETCHING; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM COMPOUNDS; SURFACE ROUGHNESS;

ETCH GAS MIXTURE; GALLIUM NITRIDE;

MICROELECTRONIC PROCESSING;

EID: 0034205538     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(00)00347-6     Document Type: Article

References (12)

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