Fabrication of T gate structures by nanoimprint lithography

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 19, Issue 6, 2001, Pages 2797-2800

  Macintyre, D S ^a   Chen, Y ^a   Lim, D ^a   Thorns, S ^a  

^a UNIVERSITY OF GLASGOW   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON BEAM LITHOGRAPHY; ELECTROPLATING; ETCHING; GATES (TRANSISTOR); METALLIZING; PHOTORESISTS; SELF ASSEMBLY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICES; SILICON; SUBSTRATES;

HIGH PATTERNING SPEEDS; HIGH RESOLUTION STAMPING TOOLS; NANOIMPRINT LITHOGRAPHY; SELF ALIGNED GATE PROCESS; SILICON ETCHING PROCESS; T GATE STRUCTURES;

NANOTECHNOLOGY;

EID: 0035519444     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1417552     Document Type: Article

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