Fabrication of 30 nm T gates using SiNx as a supporting and definition layer

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 18, Issue 6, 2000, Pages 3521-3524

  Chen, Y ^a   Edgar, D ^a   Li, X ^a   Macintyre, D ^a   Thoms, S ^a  

^a UNIVERSITY OF GLASGOW   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

DRY ETCHING; ELECTRIC POTENTIAL; ELECTRON BEAM LITHOGRAPHY; HETEROJUNCTIONS; HIGH ELECTRON MOBILITY TRANSISTORS; MESFET DEVICES; PHOTORESISTS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; POLYMETHYL METHACRYLATES; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SILICON NITRIDE;

INDIUM ALUMINUM ARSENIDE;

GATES (TRANSISTOR);

EID: 0034317718     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1321279     Document Type: Article

References (5)

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