Fabrication of T-shaped gates using UVIII chemically amplified DUV resist and PMMA

Electronics Letters

Volumn 35, Issue 4, 1999, Pages 338-339

  Chen, Y ^a   Macintyre, D ^a   Thoms, S ^a  

^a UNIVERSITY OF GLASGOW   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0033077842     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19990196     Document Type: Article

References (6)

1. MATSUMURA, M., TSUTSUI, K., and NARUKE, Y.: 'Submicrometre lift-off line with T-shaped cross-sectional form'. Electron. Lett., 1981, 12, (12), pp. 429-430
2. CHAO, P.C., KU, W.H., SMITH, P.M., and PERKINS, W.H.: '0.21micron length T-shaped gate fabrication using angle evaporation', IEEE Electron Device Lett., 1983, 4, (4), pp. 122-124
3. HOSOGI, K., NAKANO, N., MINAMI, H., KATOH, T., NISHITANI, K., and OTSUBO, M.: 'Photo/EB hybrid exposure process for T-shaped gate superlow-noise HEMTs', Electron. Lett., 1991, 27, (22), pp. 2011-2012
4. LAI, Y-L., CHANG, E.Y., CHANG, C-Y., YANG, H-P.D., NAKAMURA, K., and SHY, S.L.: 'A simple fabrication process of T-shaped gates using a deep-UV/electron-beam/deep-UV tri-layer resist system and electron-beam lithography', Jpn. J. Appl. Phys., 1996, 35, Pt. 1, (12B), pp. 6440-6446
5. AHMED, M.M., and AHMED, H.: 'Novel electron beam lithography technique for submicron T-gate fabrication', J. Vac. Sci. Technol. B, 1997, 15, (2), pp. 306-310
6. MACINTYRE, D., and THOMS, S.: 'High resolution electron beam lithography studies on Shipley chemically amplified DUV resists', Microelectron. Eng., 1997, 35, pp. 213-216