A perspective of GaAs1-xNx and GaPxN1-x as heavily doped semiconductors

Physica Status Solidi (B) Basic Research

Volumn 228, Issue 1, 2001, Pages 243-252

  Mascarenhas, A ^a   Zhang, Yong ^a   Seong, M J ^a  

^a NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035511157     PISSN: 03701972     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-3951(200111)228:1<243::AID-PSSB243>3.0.CO;2-Z     Document Type: Review

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