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Journal of Crystal Growth

Volumn 231, Issue 4, 2001, Pages 506-519

[1 0 0] versus [1 1 1] diamond growth from methyl radicals and/or acetylene

(3) D'Evelyn, Mark P a Graham, James D b Martin, L Robbin c

a GE GLOBAL RESEARCH (United States)

b GENERAL ELECTRIC COMPANY (United States)

c AEROSPACE CORPORATION (United States)

Author keywords

A1. Crystal morphology; A1. Growth models; A1. Surface processes; A3. Chemical vapor deposition processes; B1. Diamond

Indexed keywords

ACETYLENE; ADSORPTION; CHEMICAL VAPOR DEPOSITION; DESORPTION; EPITAXIAL GROWTH; ETCHING; HYDROCARBONS; HYDROGEN; METHANE; MORPHOLOGY; NUCLEATION; TWINNING;

STERIC REPULSION;

SYNTHETIC DIAMONDS;

EID: 0035502125 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(01)01514-7 Document Type: Article

Times cited : (19)

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