Simulation of homoepitaxial growth on the diamond (100) surface using detailed reaction mechanisms

Surface Science

Volumn 352-354, Issue , 1996, Pages 602-606

  Ruf, Bernhard ^a   Behrendt, Frank ^a   Deutschmann, Olaf ^a   Warnatz, Jürgen ^a  

^a UNIVERSITY OF HEIDELBERG   (Germany)

Author keywords

Computer simulations; Diamond; Growth; Low index single crystal surfaces; Models of surface kinetics; Solid gas interfaces; Surface chemical reaction

Indexed keywords

CHEMICAL REACTIONS; CHEMICAL VAPOR DEPOSITION; COMPUTER SIMULATION; CRYSTAL LATTICES; EPITAXIAL GROWTH; FREE RADICALS; MATHEMATICAL MODELS; PHASE INTERFACES; REACTION KINETICS; SURFACE PHENOMENA; SURFACES;

GROWTH RATE; HOMOEPITAXIAL GROWTH; LOW INDEX SINGLE CRYSTAL SURFACES; SURFACE CHEMICAL REACTIONS;

DIAMOND FILMS;

EID: 0030148577     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(95)01210-9     Document Type: Article

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