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Volumn 48, Issue 10, 2001, Pages 2266-2272

Effect of imprint on operation and reliability of ferroelectric random access memory (FeRAM)

Author keywords

Ferroelectric memories; Imprint; Modeling; PLZT; PZT; Reliability estimation

Indexed keywords

CAPACITORS; FERROELECTRIC DEVICES; HYSTERESIS; LEAD COMPOUNDS; MATHEMATICAL MODELS; POLARIZATION; RELIABILITY; TRANSISTORS;

EID: 0035472149     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.954465     Document Type: Article
Times cited : (23)

References (45)
  • 9
    • 0000382012 scopus 로고
    • Control of structure and electrical properties of lead-zirconium-titanate-based ferroelectric capacitators produced using a layer-by-layer ion beam sputter-deposition technique
    • (1994) Appl. Phys. Lett. , vol.64 , pp. 2873-2875
    • Auciello, O.1    Gifford, K.D.2    Kingon, A.I.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.