-
2
-
-
84886448059
-
Advanced 0.5 μm FRAM device technology with full compatibility of half-micron CMOS logic devices
-
(1997)
IEDM Tech. Dig.
, pp. 613-616
-
-
Yamazaki, T.1
Inoue, K.2
Miyazawa, H.3
Nakamura, M.4
Sashida, N.5
Satomi, R.6
Kerry, A.7
Katoh, Y.8
Noshiro, H.9
Takai, K.10
Shinohara, R.11
Ohno, C.12
Nakajima, T.13
Furumura, Y.14
Kawamura, S.15
-
3
-
-
0031632787
-
High tolerance operation of 1T/2C FeRAM's for the variation of cell capacitors characteristics
-
Proc. Symp. VLSI Technol. Dig. Tech. Papers, 1998
, pp. 124-125
-
-
Tanabe, N.1
Kobayashi, S.2
Miwa, T.3
Amanuma, K.4
Mori, H.5
Inoue, N.6
Takeuchi, T.7
Saitoh, S.8
Hayashi, Y.9
Yamada, J.10
Koike, H.11
Hada, H.12
Kunio, T.13
-
4
-
-
0033281014
-
A FRAM technology using 1T1C and triple metal layers for high performance and high density FRAM's
-
Proc. Symp. VLSI Technol. Dig. Tech. Papers, 1999
, pp. 141-142
-
-
Lee, S.Y.1
Jung, D.J.2
Song, Y.J.3
Koo, B.J.4
Park, S.O.5
Cho, H.J.6
Oh, S.J.7
Hwang, D.S.8
Lee, S.I.9
Park, Y.S.10
Jung, I.S.11
Kim, K.12
-
5
-
-
21544439412
-
Fatigue and retention in ferroelectric Y-Ba-Cu-O/Pb-Zr-Ti-O/Y-Ba-Cu-O heterostructures
-
(1992)
Appl. Phys. Lett.
, vol.61
, pp. 1537-1539
-
-
Ramesh, R.1
Chan, W.K.2
Wilkens, B.3
Gilchrist, H.4
Sands, T.5
Tarascon, J.M.6
Fork, D.K.7
Lee, J.8
Safari, A.9
-
25
-
-
0001445034
-
3 electrodes
-
(1996)
Appl. Phys. Lett.
, vol.69
, pp. 2540-2542
-
-
Aggarwal, S.1
Dhote, A.M.2
Ramesh, R.3
Warren, W.L.4
Pike, G.E.5
Dimos, D.6
Raymond, M.V.7
Tuttle, B.A.8
Evans J.T., Jr.9
-
28
-
-
0345631093
-
3 ferroelectric capacitors
-
(1998)
J. Appl. Phys.
, vol.83
, pp. 2165-2171
-
-
Sadashivan, S.1
Aggarwal, S.2
Song, T.K.3
Ramesh, R.4
Evans J.T., Jr.5
Tuttle, B.A.6
Warren, W.L.7
Dimos, D.8
-
37
-
-
0028115217
-
A 256 kb nonvolatile ferroelectric memory at 3 V and 100 ns
-
(1994)
ISSCC Dig. Tech. Papers
, pp. 268-269
-
-
Sumi, T.1
Moriwaki, N.2
Nakane, G.3
Nakamura, T.4
Judai, Y.5
Uemoto, Y.6
Nagano, Y.7
Hayashi, S.8
Azuma, M.9
Fujii, E.10
Katsu, S.11
Otsuki, T.12
McMillan, L.13
De Araujo, C.P.14
Kano, G.15
-
38
-
-
0029479992
-
A ferroelectric capacitor over bit-line (F-COB) cell for high density nonvolatile ferroelectric memories
-
Proc. Symp. VLSI Technol. Dig. Tech. Papers, 1995
, pp. 123-124
-
-
Tanabe, N.1
Matsuki, T.2
Saitoh, S.3
Takeuchi, T.4
Kobayashi, S.5
Nakajima, T.6
Maejima, Y.7
Hayashi, Y.8
Amanuma, K.9
Hase, T.10
Miyasaka, Y.11
Kunio, T.12
-
39
-
-
0030284494
-
A 60-ns 1-Mb nonvolatile ferroelectric memory with a nondriven cell plate line write/read scheme
-
(1996)
IEEE J. Solid-State Circuits
, vol.31
, pp. 1625-1634
-
-
Koike, H.1
Otsuki, T.2
Kimura, T.3
Fukuma, M.4
Hayashi, Y.5
Maejima, Y.6
Amanuma, K.7
Tanabe, N.8
Matsuki, T.9
Saitoh, S.10
Takeuchi, T.11
Kobayashi, S.12
Kunio, T.13
Hase, T.14
Miyasaka, Y.15
Shohata, N.16
Takada, M.17
-
40
-
-
0030679341
-
A 1T/1C ferroelectric RAM using a double-level metal process for highly scalable nonvolatile memory
-
Proc. Symp. VLSI Technol. Dig. Tech. Papers, 1997
, pp. 139-140
-
-
Jung, D.J.1
Kang, N.2
Lee, S.3
Koo, B.4
Lee, J.5
Park, J.6
Chun, Y.7
Lee, M.8
Jeon, B.9
Lee, S.10
Shim, T.11
Hwang, C.12
-
44
-
-
0031641612
-
An embedded FeRAM macro cell for a smart card microcontroller
-
Proc. CICC, 1998
, pp. 439-442
-
-
Miwa, T.1
Yamada, J.2
Okamoto, Y.3
Koike, H.4
Toyoshima, H.5
Hada, H.6
Hayashi, Y.7
Okizaki, H.8
Miyasaka, Y.9
Kunio, T.10
Miyamoto, H.11
Gomi, H.12
Kitajima, H.13
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