High density 1T/2C cell with Vcc/2 reference level for high stable FeRAMs

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 1997, Pages 863-866

  Tanabe, N ^a   Kobayashi, S ^a   Hada, H ^a   Kunio, T ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

FERROELECTRIC CAPACITORS; FERROELECTRIC RANDOM ACCESS MEMORY (FERAM);

CAPACITANCE; CAPACITORS; FERROELECTRIC DEVICES; NONVOLATILE STORAGE; TRANSISTORS;

RANDOM ACCESS STORAGE;

EID: 84886448030     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)