Sputtering process design of PZT capacitors for stable FeRAM operation

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1998, Pages 819-822

  Inoue, Naoya ^a   Takeuchi, Tsuneo ^a   Hayashi, Yoshihiro ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROCHEMICAL ELECTRODES; FERROELECTRIC DEVICES; LEAD COMPOUNDS; PERMITTIVITY; RANDOM ACCESS STORAGE; SPUTTERING;

FERROELECTRIC RANDOM ACCESS MEMORY (FERAM);

CAPACITORS;

EID: 0032266795     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)