Voltage shift effect on retention failure in ferroelectric memories

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 9 PART B, 1998, Pages 5203-5206

  Nakao, Keisaku ^a   Judai, Yuji ^a   Azuma, Masamichi ^a   Shimada, Yasuhiro ^a   Otsuki, Tatsuo ^a  

^a PANASONIC CORPORATION   (Japan)

Author keywords

Ferroelectric memory; Retention; SrBi2(Ta, Nb)2O9; Voltage shif

Indexed keywords

CAPACITANCE; CAPACITORS; ELECTRIC POTENTIAL; FERROELECTRIC DEVICES; POLARIZATION; STRONTIUM COMPOUNDS; THIN FILMS;

FERROELECTRIC MEMORY; RETENTION FAILURE; VOLTAGE SHIFT EFFECT;

RANDOM ACCESS STORAGE;

EID: 0032155098     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.5203     Document Type: Article

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