Improved hot-electron reliability in high-performance, multilevel-metal CMOS using deuterated barrier-nitride processing

IEEE Electron Device Letters

Volumn 20, Issue 10, 1999, Pages 501-503

  Clark, W F ^a   Ference, T G ^a   Mittl, S W ^a   Burnham, J S ^a   Adams, E D ^a  

^a IBM MICROELECTRONICS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DEUTERIUM; HOT CARRIERS; SEMICONDUCTING FILMS;

HOT ELECTRON RELIABILITY;

CMOS INTEGRATED CIRCUITS;

EID: 0033344932     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.791923     Document Type: Article

References (8)

1. H. Momose, S. Nakamura, T. Ohguro, Y. Yoshitomi, E. Morifuji, T. Morimoto, Y. Katuma, and H. Iwai, "A study of hot-carrier degradation in n-and p-MOSFET's with ultrathin gate oxides in the direct tunneling regime," in IEDM Tech. Dig., Dec. 1997, pp. 453-456.
2. B. S. Lisenker and R. J. Roddy, "Semiconductor device comprising deuterium atoms," Int. Patent Applicat. WO 94/19829, 1994.
3. J. W. Lyding, K. Hess, and I. Kizilyalli, "Reduction of hot-electron degradation in metal oxide semiconductor transistors by deuterium processing," Appl. Phys. Lett., vol. 68, no. 18, p. 2526, 1996.
4. S. Aur, T. Grider, V. McNeil, T. Holloway, and R. Eklund, "Effects of advanced processes on hot-carrier reliability," in Proc. IEEE Int. Reliab. Phys. Symp., 1998, pp. 180-183.
5. W. F. Clark, T. G. Ference, T. B. Hook, K. M. Watson, S. W. Mittl, and J. S. Burnham, "Process stability of deuterium annealed MOSFET's," Electron Device Lett., vol. 20, pp. 48-50, Jan. 1999.
6. I. Kizilyalli, G. Abeln, Z. Chen, J. Lee, G. Weber, B. Kotzias, S. Chetler, J. Lyding, and K. Hess, "Improvement of hot-carrier reliability with deuterium anneals for manufacturing multilevel metal/dielectric MOS systems. IEEE Electron Device Lett., vol. 19, pp. 444-446, Nov. 1998.
7. Y. Sugano, S. Minegishi, H. Sumi, and M. Itabashi, "In situ observation and formation mechanism of aluminum voiding," in Proc. IEEE Int. Reliab. Phys. Symp., 1988, pp. 34-38.
8. T. G. Ference, J. S. Burnham, W. F. Clark, T. B. Hook, S. W. Mittl, K. M. Watson, and L. K. Han, "The combined effects of deuterium anneals and deuterated barrier nitride processing on hot-electron degradation in MOSFET's," IEEE Trans. Electron Devices, vol. 46, pp. 747-753, Apr. 1999.