Experimental evaluation of device degradation subject to oxide soft breakdown

Solid-State Electronics

Volumn 45, Issue 9, 2001, Pages 1521-1524

  Zhang, J ^a   Yuan, J S ^a   Ma, Y ^b   Chen, Y ^b   Oates, A S ^b  

^a University of Central Florida   (United States)

^b AGERE SYSTEMS   (United States)

Author keywords

Direct current measurement technique; Hard breakdown; Hot carrier stress; Soft breakdown; Stress induced leakage current

Indexed keywords

ELECTRON TRAPS; GATES (TRANSISTOR); HOLE TRAPS; HOT CARRIERS; LEAKAGE CURRENTS; SUBSTRATES; THRESHOLD VOLTAGE;

SOFT BREAKDOWN (SBD);

MOSFET DEVICES;

EID: 0035447207     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(01)00252-0     Document Type: Article

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