Memory operations of 1T2C-type ferroelectric memory cell with excellent data retention characteristics

IEEE Transactions on Electron Devices

Volumn 48, Issue 9, 2001, Pages 2002-2008

  Yoon, Sung Min ^b   Ishiwara, Hiroshi ^a,c  

^a IEEE

^b R&D Association for Future Electron Devices   (Japan)

^c TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; DATA STORAGE EQUIPMENT; ELECTRIC POTENTIAL; EQUIVALENT CIRCUITS; FIELD EFFECT TRANSISTORS;

DATA RETENTION; FERROELECTRIC MEMORY CELL;

FERROELECTRIC MATERIALS;

EID: 0035446153     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.944189     Document Type: Article

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