Non-volatile FCG (ferroelectric-capacitor and transistor-gate connection) memory cell with non-destructive read-out operation

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 1996, Pages 56-57

  Katoh, Y ^a   Fujieda, S ^a   Hayashi, Y ^a   Kunio, T ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; CAPACITORS; ELECTRIC CONNECTORS; ELECTRIC CURRENTS; ELECTRIC FIELDS; FERROELECTRIC DEVICES; GATES (TRANSISTOR); MOSFET DEVICES; POLARIZATION; RELIABILITY;

DRAIN CURRENT; FERROELECTRIC CAPACITOR; FERROELECTRIC POLARIZATION; GATE CAPACITOR; GATE VOLTAGE; NONDESTRUCTIVE READOUT OPERATION;

NONVOLATILE STORAGE;

EID: 0029713473     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)