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IEEE Transactions on Electron Devices

Volumn 48, Issue 9, 2001, Pages 1878-1884

Improving strained-Si on Si 1-xGe x deep submicron MOSFETs performance by means of a stepped doping profile

(4) Gámiz, Francisco a,b Roldán, Juan B b Kosina, Hans a,c Grasser, Tibor c

a IEEE (Spain)

b UNIVERSITY OF GRANADA (Spain)

c VIENNA UNIVERSITY OF TECHNOLOGY (Austria)

Author keywords

Inversion layers; MOSFETs; SiGe; Simulation

Indexed keywords

COULOMB LIMITED MOBILITY; COULOMB SCATTERING; ELECTRON QUANTIZATION; INTERFACE TRAPPED CHARGES; STEPPED DOPING PROFILE;

COMPUTER SIMULATION; ELECTRIC CURRENTS; ELECTRON MOBILITY; ELECTRON SCATTERING; MONTE CARLO METHODS; PHONONS; QUANTUM THEORY; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; SURFACE ROUGHNESS;

MOSFET DEVICES;

EID: 0035445462 PISSN: 00189383 EISSN: None Source Type: Journal
DOI: 10.1109/16.944172 Document Type: Article

Times cited : (5)

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